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台积电锁定12英寸碳化硅新战场,布局AI时代散热关键材料
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00:01","market":"us","language":"zh","title":"台积电锁定12英寸碳化硅新战场,布局AI时代散热关键材料","url":"https://stock-news.laohu8.com/highlight/detail?id=2571810355","media":"DT新材料","summary":"晶圆代工龙头台积电正以一项大胆的材料转向回应这一挑战,那就是全面拥抱12英寸碳化硅单晶基板,并逐步退出氮化镓业务。此举不仅象征台积电在材料战略recalibration,更显示散热管理已经从“辅助技术”升格为“竞争优势”的关键。此前,台积电宣布,预计于2027年前逐步退出氮化镓业务,将资源转投SiC领域。此举显示公司对市场与材料策略的重新评估。因此,台积电在12英寸晶圆制造上的深厚经验,使其有别于其他竞争者。","content":"<html><body><article><p>据科技新报消息,全球半导体产业迈入人工智能(AI)与高效能运算(HPC)驱动的<a href=\"https://laohu8.com/S/00166\">新时代</a>,散热管理正逐渐成为影响芯片设计与制程能否突破的核心瓶颈。当3D堆叠、2.5D整合等先进封装架构持续推升芯片密度与功耗,传统陶瓷基板已难以满足热通量需求。</p><p>晶圆代工龙头<a href=\"https://laohu8.com/S/TSM\">台积电</a>正以一项大胆的材料转向回应这一挑战,那就是全面拥抱12英寸碳化硅(SiC)单晶基板,并逐步退出氮化镓(GaN)业务。此举不仅象征台积电在材料战略recalibration,更显示散热管理已经从“辅助技术”升格为“竞争优势”的关键。</p><p>碳化硅以宽能隙半导体闻名,过去主要用于高效率电力电子器件,如电动车逆变器、工业马达控制与新能源基础设施。然而,SiC的潜力不止于此,优异热导率可达约500W/mK,远高于常见陶瓷基板如氧化铝(Al2O3)或蓝宝石(Sapphire)。</p><p>AI加速器、数据中心处理器及AR智能眼镜等高密度应用逐步落地,散热空间受限问题日益严峻。尤其是在穿戴式设备中,微型芯片组件贴近眼睛,若无精确的热控将影响安全与稳定性。这使得台积电凭借长年在12英寸晶圆制程的经验,正推动以大尺寸单晶SiC取代传统陶瓷基板。这意味着不必重建制造体系,即能在既有产线导入新材料,兼顾良率与<span>成本优势</span>。</p><p>虽然,用于散热管理的SiC基板不需达到功率元件那般严苛的电性缺陷标准,但晶体完整性依旧至关重要。许多外在因素不仅会干扰声子传导,削弱热导率,还可能造成局部过热,进而影响机械强度与表面平整度。对12英寸大尺寸晶圆而言,翘曲与变形更是关键课题,因其直接影响芯片贴合与先进封装的良率。因此,业界焦点已从“消除电性缺陷”转向“确保体密度均匀、低孔隙率与高表面平整度”,这些条件被视为高良率量产SiC散热基板的前提。</p><p>报导表示,SiC结合了高热导率、强机械性与抗热冲击性,在2.5D与3D封装架构中展现出独特优势。例如在2.5D整合方面,芯片并排架设于硅或有机中介层上,信号连接短且高效,散热挑战主要在水平方向上。另外,在3D整合方面,芯片透过硅通孔(TSV)或混合键合垂直堆叠,连线密度极高,但散热压力也随之倍增。因此,SiC除了能作为被动散热材料,亦可搭配钻石、液态金属等先进散热方案,构成“混合式冷却”解决方案。</p><p>此前,台积电宣布,预计于2027年前逐步退出氮化镓(GaN)业务,将资源转投SiC领域。此举显示公司对市场与材料策略的重新评估。因为相比GaN在高频应用优势,SiC在热管理的全面性与可扩展性更符合台积电的长远布局。12英寸大尺寸化,不仅可降低单位成本,还能提升制程均匀性。尽管SiC在切片、抛光与平坦化上仍面临挑战,但台积电的既有设备与封装工艺能力,使其有望克服障碍,加速量产落地。</p><p>事实上,过去SiC几乎与电动车功率元件划上等号。然而,台积电正推动SiC跨入新应用,例如导电型N型SiC作为散热基板,在高效能处理器、AI加速器中承担热扩散角色;或者半绝缘型SiC为中介层(Interposer),以在芯片分割与chiplet设计,提供电性隔离与热传导兼顾的解决方案。这些新路径,意味着SiC不再只是“电力电子的代名词”,而是将成为AI与数据中心芯片“热管理骨干”的基石材料。</p><p>高阶材料领域,钻石与石墨烯虽拥有极高热导率(钻石可达1,000~2,200W/mK,单层石墨烯更高达3,000~5,000W/mK),但其高昂成本与制程规模化困难,使其难以成为主流。液态金属、导电凝胶与微流体冷却等替代方案虽有潜力,但在整合性与量产成本上亦存挑战。相较之下,SiC以“性能、机械强度与可量产性兼具”的特点,展现出最具实际性的折衷方案。</p><p>因此,台积电在12英寸晶圆制造上的深厚经验,使其有别于其他竞争者。不仅能以既有基础加速SiC平台建构,还能凭借高度制程控制能力,快速将材料优势转化为系统级散热方案。与此同时,<a href=\"https://laohu8.com/S/INTC\">英特尔</a>推动背面供电(Backside Power Delivery)与热─功率协同设计,显示全球龙头厂商皆已将散热视为核心竞争力。</p><p><strong>参考信息</strong>:本文部分素材和图片来自网络公开信息,本平台发布仅为了传达一种不同观点,不代表对该观点赞同或支持。如果有任何问题,请联系<strong>19045661526(同微信)</strong>。</p><img src=\"https://mmbiz.qpic.cn/sz_mmbiz_png/OIc0Gsk6so1c8YrGKAC41eVWzR4icRs8bAQB3shNYuJXsGCNQUjh1FCba45FzzHoGN7P0CWDZEwmIGiaXDw6iaUJA/640?wx_fmt=png&from=appmsg#imgIndex=1\"/><img src=\"https://mmbiz.qpic.cn/sz_mmbiz_jpg/OIc0Gsk6so0jNdNwOd1VU0HIh7jPczJ3ntQ8Picyf0peibNh57EC4ksvH97d6yxft0LarMVtKoC4iccwucSKYOiaKg/640?wx_fmt=jpeg&from=appmsg#imgIndex=3\"/></article></body></html>","source":"tencent","collect":0,"html":"<!DOCTYPE html>\n<html>\n<head>\n<meta http-equiv=\"Content-Type\" content=\"text/html; charset=utf-8\" />\n<meta name=\"viewport\" content=\"width=device-width,initial-scale=1.0,minimum-scale=1.0,maximum-scale=1.0,user-scalable=no\"/>\n<meta name=\"format-detection\" content=\"telephone=no,email=no,address=no\" 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#eee; margin: 0;}\n.head .h-time {font-size: 11px; color: #7E829C; margin: 0;line-height: 11px;}\n.small {font-size: 12.5px; display: inline-block; transform: scale(0.9); -webkit-transform: scale(0.9); transform-origin: left; -webkit-transform-origin: left;}\n.smaller {font-size: 12.5px; display: inline-block; transform: scale(0.8); -webkit-transform: scale(0.8); transform-origin: left; -webkit-transform-origin: left;}\n.bt-text {font-size: 12px;margin: 1.5em 0 0 0}\n.bt-text p {margin: 0}\n</style>\n</head>\n<body>\n<div class=\"wrapper\">\n<header>\n<h2 class=\"title\">\n台积电锁定12英寸碳化硅新战场,布局AI时代散热关键材料\n</h2>\n\n<h4 class=\"meta\">\n\n\n2025-09-30 00:01 北京时间 <a href=http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN2025093000191597b14afe&s=b><strong>DT新材料</strong></a>\n\n\n</h4>\n\n</header>\n<article>\n<div>\n<p>据科技新报消息,全球半导体产业迈入人工智能(AI)与高效能运算(HPC)驱动的新时代,散热管理正逐渐成为影响芯片设计与制程能否突破的核心瓶颈。当3D堆叠、2.5D整合等先进封装架构持续推升芯片密度与功耗,传统陶瓷基板已难以满足热通量需求。晶圆代工龙头台积电正以一项大胆的材料转向回应这一挑战,那就是全面拥抱12英寸碳化硅(SiC)单晶基板,并逐步退出氮化镓(GaN)业务。此举不仅象征台积电在材料战略...</p>\n\n<a href=\"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN2025093000191597b14afe&s=b\">Web Link</a>\n\n</div>\n\n\n</article>\n</div>\n</body>\n</html>\n","type":0,"thumbnail":"","relate_stocks":{"LU0316494557.USD":"FRANKLIN GLOBAL FUNDAMENTAL STRATEGIES \"A\" ACC","BK4543":"AI","LU1989764748.USD":"东方汇理环球颠覆性机遇A2 Acc","LU0572939691.SGD":"Janus Henderson Horizon Asian Dividend Income A2 SGD","LU2491050071.SGD":"WELLINGTON SUSTAINABLE OUTCOMES \"A\" (SGDHDG) ACC","IE00BFXG0V08.USD":"BNY MELLON GLOBAL LEADERS \"B\" (USD) ACC","LU1868837565.USD":"CT (LUX) I GLOBAL EMERGING MARKET EQUITIES \"1\" 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ACC"},"source_url":"http://gu.qq.com/resources/shy/news/detail-v2/index.html#/?id=nesSN2025093000191597b14afe&s=b","is_english":false,"share_image_url":"https://static.laohu8.com/9a95c1376e76363c1401fee7d3717173","article_id":"2571810355","content_text":"据科技新报消息,全球半导体产业迈入人工智能(AI)与高效能运算(HPC)驱动的新时代,散热管理正逐渐成为影响芯片设计与制程能否突破的核心瓶颈。当3D堆叠、2.5D整合等先进封装架构持续推升芯片密度与功耗,传统陶瓷基板已难以满足热通量需求。晶圆代工龙头台积电正以一项大胆的材料转向回应这一挑战,那就是全面拥抱12英寸碳化硅(SiC)单晶基板,并逐步退出氮化镓(GaN)业务。此举不仅象征台积电在材料战略recalibration,更显示散热管理已经从“辅助技术”升格为“竞争优势”的关键。碳化硅以宽能隙半导体闻名,过去主要用于高效率电力电子器件,如电动车逆变器、工业马达控制与新能源基础设施。然而,SiC的潜力不止于此,优异热导率可达约500W/mK,远高于常见陶瓷基板如氧化铝(Al2O3)或蓝宝石(Sapphire)。AI加速器、数据中心处理器及AR智能眼镜等高密度应用逐步落地,散热空间受限问题日益严峻。尤其是在穿戴式设备中,微型芯片组件贴近眼睛,若无精确的热控将影响安全与稳定性。这使得台积电凭借长年在12英寸晶圆制程的经验,正推动以大尺寸单晶SiC取代传统陶瓷基板。这意味着不必重建制造体系,即能在既有产线导入新材料,兼顾良率与成本优势。虽然,用于散热管理的SiC基板不需达到功率元件那般严苛的电性缺陷标准,但晶体完整性依旧至关重要。许多外在因素不仅会干扰声子传导,削弱热导率,还可能造成局部过热,进而影响机械强度与表面平整度。对12英寸大尺寸晶圆而言,翘曲与变形更是关键课题,因其直接影响芯片贴合与先进封装的良率。因此,业界焦点已从“消除电性缺陷”转向“确保体密度均匀、低孔隙率与高表面平整度”,这些条件被视为高良率量产SiC散热基板的前提。报导表示,SiC结合了高热导率、强机械性与抗热冲击性,在2.5D与3D封装架构中展现出独特优势。例如在2.5D整合方面,芯片并排架设于硅或有机中介层上,信号连接短且高效,散热挑战主要在水平方向上。另外,在3D整合方面,芯片透过硅通孔(TSV)或混合键合垂直堆叠,连线密度极高,但散热压力也随之倍增。因此,SiC除了能作为被动散热材料,亦可搭配钻石、液态金属等先进散热方案,构成“混合式冷却”解决方案。此前,台积电宣布,预计于2027年前逐步退出氮化镓(GaN)业务,将资源转投SiC领域。此举显示公司对市场与材料策略的重新评估。因为相比GaN在高频应用优势,SiC在热管理的全面性与可扩展性更符合台积电的长远布局。12英寸大尺寸化,不仅可降低单位成本,还能提升制程均匀性。尽管SiC在切片、抛光与平坦化上仍面临挑战,但台积电的既有设备与封装工艺能力,使其有望克服障碍,加速量产落地。事实上,过去SiC几乎与电动车功率元件划上等号。然而,台积电正推动SiC跨入新应用,例如导电型N型SiC作为散热基板,在高效能处理器、AI加速器中承担热扩散角色;或者半绝缘型SiC为中介层(Interposer),以在芯片分割与chiplet设计,提供电性隔离与热传导兼顾的解决方案。这些新路径,意味着SiC不再只是“电力电子的代名词”,而是将成为AI与数据中心芯片“热管理骨干”的基石材料。高阶材料领域,钻石与石墨烯虽拥有极高热导率(钻石可达1,000~2,200W/mK,单层石墨烯更高达3,000~5,000W/mK),但其高昂成本与制程规模化困难,使其难以成为主流。液态金属、导电凝胶与微流体冷却等替代方案虽有潜力,但在整合性与量产成本上亦存挑战。相较之下,SiC以“性能、机械强度与可量产性兼具”的特点,展现出最具实际性的折衷方案。因此,台积电在12英寸晶圆制造上的深厚经验,使其有别于其他竞争者。不仅能以既有基础加速SiC平台建构,还能凭借高度制程控制能力,快速将材料优势转化为系统级散热方案。与此同时,英特尔推动背面供电(Backside Power Delivery)与热─功率协同设计,显示全球龙头厂商皆已将散热视为核心竞争力。参考信息:本文部分素材和图片来自网络公开信息,本平台发布仅为了传达一种不同观点,不代表对该观点赞同或支持。如果有任何问题,请联系19045661526(同微信)。","news_type":1,"symbols_score_info":{"03145":0.6,"TSM":1.5}},"isVote":1,"tweetType":1,"viewCount":14,"commentLimit":10,"likeStatus":false,"favoriteStatus":false,"reportStatus":false,"symbols":[],"verified":2,"subType":0,"readableState":1,"langContent":"CN","currentLanguage":"CN","warmUpFlag":false,"orderFlag":false,"shareable":true,"causeOfNotShareable":"","featuresForAnalytics":[],"commentAndTweetFlag":false,"andRepostAutoSelectedFlag":false,"upFlag":false,"length":27,"optionInvolvedFlag":false,"xxTargetLangEnum":"ZH_CN"},"commentList":[],"isCommentEnd":true,"isTiger":false,"isWeiXinMini":false,"url":"/m/post/484105077629776"}
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